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| Schottky Barrier Diodes (SBD) MA3X727 Silicon epitaxial planar type Unit : mm For super-high speed switching circuit For small current rectification I Features * Sealed in the Mini type mold. High breakdown voltage type (VR = 50 V) * Allowing to rectify under (IF(AV) = 200 mA) condition * High reliability 2.9 - 0.05 + 0.2 2.8 - 0.3 0.65 0.15 + 0.2 1.5 - 0.05 + 0.25 0.65 0.15 0.95 1.9 0.2 1 3 2 0.95 1.45 0 to 0.1 1.1 - 0.1 I Absolute Maximum Ratings Ta = 25C Parameter Reverse voltage (DC) Repetitive peak reverse voltage Peak forward current Average forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Symbol VR VRRM IFM IF(AV) IFSM Tj Tstg Rating 50 50 300 200 1 150 -55 to +150 Unit V V mA mA A C C 0.1 to 0.3 0.4 0.2 0.8 1 : Anode 2 : NC JEDEC : TO-236 3 : Cathode EIAJ : SC-59 Mini Type Package (3-pin) Marking Symbol: M1Z Internal Connection 1 3 2 Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) I Electrical Characteristics Ta = 25C Parameter Reverse current (DC) Forward voltage (DC) Symbol IR VF1 VF2 Terminal capacitance Reverse recovery time* Ct trr VR = 50 V IF = 30 mA IF = 200 mA VR = 0 V, f = 1 MHz IF = IR = 100 mA Irr = 10 mA, RL = 100 30 3.0 Conditions Min Typ Max 200 0.36 0.55 Unit A V V pF ns Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment 2. Rated input/output frequency: 1 000 MHz 3. * : trr measuring instrument Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 10 mA IF = 100 mA IR = 100 mA RL = 100 Output Pulse A VR Pulse Generator (PG-10N) Rs = 50 W.F.Analyzer (SAS-8130) Ri = 50 90% tp = 2 s tr = 0.35 ns = 0.05 0.16 - 0.06 + 0.2 + 0.1 0.4 - 0.05 + 0.1 1 MA3X727 IF V F 103 0.5 Schottky Barrier Diodes (SBD) VF Ta 105 Ta = 150C IF = 200 mA IR VR 102 Forward current IF (mA) Forward voltage VF (V) 10 100C 100 mA 0.3 Reverse current IR (A) Ta = 150C - 20C 0.4 104 103 100C 1 25C 0.2 30 mA 0.1 102 25C 10 10-1 10-2 0 0.1 0.2 0.3 0.4 0.5 0.6 0 -40 1 0 40 80 120 160 200 0 10 20 30 40 50 60 Forward voltage VF (V) Ambient temperature Ta (C) Reverse voltage VR (V) Ct VR 30 f = 1 MHz Ta = 25C IR T a 105 Terminal capacitance Ct (pF) 25 104 20 Reverse current IR (A) 103 VR = 30 V 102 5V 15 10 5 10 0 0 10 20 30 40 50 60 1 -40 0 40 80 120 160 200 Reverse voltage VR (V) Ambient temperature Ta (C) 2 |
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